0°C < TA < +70°C; 0°C < TJ < +85°C; 8V < VCC1 < 14V; 5V < VCC2 < 14V; DAC Code: VID2 = VID1
=
Electrical Characteristics:
V
ID0 = 1; VID3 = 0; CVGATE = 1nF; COFF = 330pF; CSS = 0.1µF, unless otherwise specified.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ꢀ
DAC: continued
VID3
VID2
VID1
VID0
0
0
0
0
0
1
0
0
0
0
0
1
1
0
0
0
1
0
1
0
3.1086
3.2076
3.3066
3.4056
3.5046
3.1400
3.2400
3.3400
3.4400
3.5400
3.1714
3.2724
3.3734
3.4744
3.5754
V
V
V
V
V
ꢀ VGATE
Out SOURCE Sat at 100mA
Out SINK Sat at 100mA
Out Rise Time
Out Fall Time
Shoot-Through Current
VGATE Resistance
Measure VCC2 – VGATE
Measure VGATE – VPGnd;
1V < VGATE < 9V; VCC1 = VCC2 = 12V
9V > VGATE > 1V; VCC1 = VCC2 = 12V
Note 1
Resistor to LGnd
LGnd to VGATE @ 10mA
1.2
1.0
30
2.0
1.5
50
50
50
100
800
V
V
ns
30
ns
mA
kΩ
mV
20
50
600
VGATE Schottky
ꢀ Soft Start (SS)
Charge Time
1.6
25
1.0
0.50
0.9
3.3
100
3.3
0.95
1.0
2.5
5.0
ms
ms
%
V
V
Pulse Period
Duty Cycle
COMP Clamp Voltage
VFFB SS Fault Disable
High Threshold
200
6.0
1.10
1.1
3.0
(Charge Time/Pulse Period) × 100
VFB = 0V; VSS = 0
VGATE = Low
V
ꢀ PWM Comparator
Transient Response
V
FFB = 0 to 5V to VGATE = 9V to 1V;
100
0.3
125
ns
VCC1 = VCC2 = 12V
VFFB = 0V
VFFB Bias Current
µA
ꢀ Supply Current
ICC1
No Switching
No Switching
VFB = COMP = VFFB
VFB = COMP = VFFB
8.5
1.6
8
13.5
3.0
13
mA
mA
mA
mA
ICC2
Operating ICC1
Operating ICC2
2
5
ꢀ COFF
Normal Charge Time
Extension Charge Time
Discharge Current
VFFB = 1.5V; VSS = 5V
VSS = VFFB = 0
COFF to 5V; VFB >1V
1.0
5.0
5.0
1.6
8.0
2.2
11.0
µs
µs
mA
ꢀ Time Out Timer
Time Out Time
VFB = VCOMP; VFFB = 2V;
Record VGATE Pulse High Duration
VFFB = 0V
10
35
30
50
50
65
µs
%
Fault Mode Duty Cycle
Note 1: Guaranteed by design, not 100% tested in production.
3
CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
