Electrical Characteristics: continued
TEST CONDITIONS MIN
PARAMETER
TYP
MAX
UNIT
ꢀ Error Amplifier Section (Unless otherwise specified, VCM = 2.5V): continued
Open Loop Voltage Gain
Gain-Bandwidth*
∆
OUT = 1 to 4V, RL ≥ 10 MΩ
60
80
3
dB
V
TA = 25˚C, AV = 0dB
MHz
ꢀ Current Limit Amplifier (Unless otherwise specified, VSENSE = VO)
Input Offset Voltage
Input Offset Voltage
Input Bias Current
TA = 25˚C, EA Set for Max. Output
180
170
200
-1
220
230
-10
mV
mV
µA
Over Operating Temperature Range
Common Mode
Rejection Ratio
V
SENSE = 0 to 15V
50
50
0.5
70
60
60
dB
dB
V
Power Supply Rejection Ratio VIN = 10 to 40V
Output Swing
Minimum Total Range
OUT = 1 to 4V, RL ≥ 10MΩ
5.0
Open Loop Voltage Gain
Delay Time*
∆
V
80
dB
ns
∆VIN = 300mV
300
ꢀ Output Section (Each Output)
Collector Emitter Voltage
Collector Leakage Current
Saturation
IC = 100µA
VCE = 50V
60
17
80
V
0.1
20.0
µA
IC = 20mA
IC = 200mA
0.2
1.0
0.4
2.2
V
V
Emitter Output Voltage
Rise Time*
IE = 50mA
18
V
TA = 25˚C, R = 2kΩ
TA = 25˚C, R = 2kΩ
TA = 25˚C, VCOMP to VOUT
TA = 25˚C, VSHUT to VOUT
TA = 25˚C, RC = 2kΩ
200
100
300
200
0.7
ns
ns
ns
ns
V
Fall Time*
Comparator Delay*
Shutdown Delay*
Shutdown Threshold
Thermal Shutdown*
0.5
1.0
165
˚C
* These parameters are guaranteed by design but not 100% tested in production.
Typical Performance Characteristics
Duty Cycle vs. Input Voltage
Error Amplifier Voltage Gain vs. Frequency Over RF
50
40
30
20
10
0
R
= ∞
F
80
60
40
20
0
V
A
= 20V
IN
T
= 25˚C
R
R
= 1MΩ
F
F
V
= 20V
IN
= 300kΩ
R
= 2700Ω
= 25˚C
T
A
T
R
R
= 100kΩ
= 30kΩ
F
F
R
is impedance to ground.
Note: Duty-Cycle is
percent of two
F
Values below 30kΩ will begin
to limit the maximum
duty-cycle.
clock periods that
one output conducts
100
1k
10k
100k
1M
0
1
2
3
4
5
FREQUENCY (Hz)
INPUT VOLTAGE V
IN
3
CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
