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CEU9926 参数 Datasheet PDF下载

CEU9926图片预览
型号: CEU9926
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑电平增强模式场效应晶体管 [N-Channel Logic Level Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 59 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CED9926/CEU9926  
ELECTRICAL CHARACTERISTICS (T  
C
=25 C unless otherwise noted)  
Typ Max  
Parameter  
Condition  
Min  
Unit  
Symbol  
DRAIN-SOURCE DIODE CHARACTERISTICS a  
Diode Forward Voltage  
V
V
SD  
V
GS = 0V, Is = 4A  
1.3  
6
Notes  
ś
ś
a.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.  
b.Guaranteed by design, not subject to production testing.  
30  
15  
12  
9
VGS=4.5,3.5,3V  
VGS=2.5V  
25  
20  
15  
VGS=2V  
6
10  
25 C  
3
5
Tj=125 C  
-55 C  
VGS=1.5V  
0
0
0.5  
1
1.5  
2
2.5  
4
3
2
1
0
VGS, Gate-to-Source Voltage (V)  
VDS, Drain-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
2.2  
1.9  
1000  
ID=8A  
VGS=4.5V  
800  
600  
400  
1.6  
1.3  
Ciss  
Coss  
Crss  
1.0  
200  
0
0.7  
0.4  
0
5
10  
15  
20  
-100  
-50  
0
50  
100  
200  
150  
VDS, Drain-to Source Voltage (V)  
TJ, Junction Temperature( C)  
Figure 4. On-Resistance Variation with  
Temperature  
Figure 3. Capacitance  
6-84