CED9926/CEU9926
=
25 C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
C
4
TypC Max
Parameter
Condition
Min
Unit
Symbol
OFF CHARACTERISTICS
V
GS = 0V, ID=250µA
Drain-Source Breakdown Voltage
20
V
BVDSS
6
µA
nA
1
I
DSS
GSS
V
DS = 20V, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS
=
12V, VDS = 0V
Ć
I
100
Ć
ON CHARACTERISTICSa
V
GS(th)
1.5
30
40
V
Gate Threshold Voltage
V
DS = VGS, I
D
= 250µA
0.5
26
mΩ
mΩ
V
V
V
V
GS = 4.5V, I
D
= 8A
R
I
DS(ON)
Drain-Source On-State Resistance
GS = 2.5V, I
D
= 6.6A
DS = 5V, VGS = 4.5V
On-State Drain Current
D(ON)
A
S
gFS
15
Forward Transconductance
DS = 10V, I = 8A
D
DYNAMIC CHARACTERISTICSb
500
300
140
Input Capacitance
P
F
C
ISS
V
DS =15V, VGS = 0V
P
P
F
F
Output Capacitance
C
OSS
f =1.0MH
Z
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICSb
C
RSS
Turn-On Delay Time
t
D(ON)
40
40
ns
ns
20
18
V
DD = 10V,
ID
= 1A
Rise Time
tr
V
GS = 4.5V,
Turn-Off Delay Time
Fall Time
tD(OFF)
60
28
10
108
56
ns
ns
R
GEN =6
Ω
tf
nC
15
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
DS = 10V,I = 8A
GS = 4.5V
D
Qgs
2.3
2.9
nC
nC
Qgd
6-83
CET [ CHINO-EXCEL TECHNOLOGY ]
