CED6060R/CEU6060R
1800
3.0
VGS=10V
2.5
1500
1200
900
Ciss
2.0
1.5
Tj=125 C
25 C
1.0
600
300
0
Coss
-55 C
0.5
0
Crss
6
0
10
20
30
40
50
0
10
15
20
25
30
ID, Drain Current(A)
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
1.15
1.10
1.15
1.10
V
DS=VGS
ID=250ijA
I
D
=250ijA
1.05
1.0
1.05
1.00
0.95
0.95
0.90
0.85
0.90
0.85
0.80
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
50
40
100
30
10
20
10
V
DS=10V
0
1
0.4
0
10
20
30
40
0.6
0.8
1.0
1.2
1.4
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
6-45
CET [ CHINO-EXCEL TECHNOLOGY ]
