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CEU6060R 参数 Datasheet PDF下载

CEU6060R图片预览
型号: CEU6060R
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑电平增强模式场效应晶体管 [N-Channel Logic Level Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 44 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CED6060R/CEU6060R  
ELECTRICAL CHARACTERISTICS (T  
C
=25 C unless otherwise noted)  
Typ  
Max  
Unit  
Parameter  
Condition  
Min  
Symbol  
DYNAMIC CHARACTERISTICSb  
Input Capacitance  
P
F
1178  
428  
95  
C
ISS  
OSS  
RSS  
V
DS =25V, VGS = 0V  
6
P
P
F
F
Output Capacitance  
C
f =1.0MH  
Z
Reverse Transfer Capacitance  
C
DRAIN-SOURCE DIODE CHARACTERISTICS b  
Diode Forward Voltage  
V
V
SD  
V
GS = 0V, Is =24A  
1.3  
0.9  
Notes  
ś
ś
a.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.  
b.Guaranteed by design, not subject to production testing.  
40  
40  
VGS=10,8,7V  
TJ=125 C  
25 C  
35  
6V  
30  
20  
30  
25  
VGS=5V  
20  
15  
4V  
10  
10  
0
-55 C  
7
5
0
2
3
4
5
6
8
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
VDS, Drain-to-Source Voltage (V)  
VGS, Gate-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
6-44