CED4279/CEU4279
P-CHANNEL
25
15
25 C
-VGS=10,8V
-VGS=5.
20
15
10
5
12
9
0V
6
-VGS=4.
0V
3
TJ=125 C
-55 C
0
0
0
0.5
1
1.5
2
2.5
0
2
4
6
8
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 7. Output Characteristics
Figure 8. Transfer Characteristics
900
750
600
450
300
150
0
2.2
1.9
1.6
1.3
1.0
0.7
0.4
ID=-8A
VGS=-10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 9. Capacitance
Figure 10. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
V
GS=0V
ID=-250µA
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 11. Gate Threshold Variation
with Temperature
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5
CET [ CHINO-EXCEL TECHNOLOGY ]
