CED4279/CEU4279
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-40
V
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -8A
VGS = -4.5V, ID = -6A
-2
-4
72
V
60
90
mΩ
mΩ
On-Resistance
110
Dynamic Characteristics d
Forward Transconductance c
Input Capacitance
c
gFS
VDS = -5V, ID = -8A
10
710
130
80
S
Ciss
Coss
Crss
pF
pF
pF
VDS = -20V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
td(on)
tr
td(off)
tf
11
3
22
6
ns
ns
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
32
5
64
10
7.7
ns
Turn-On Fall Time
ns
Total Gate Charge
Qg
5.8
1.9
2.5
nC
nC
nC
VDS = -20V, ID = -4.5A,
VGS = -4.5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-8
A
V
VSD
VGS = 0V, IS = -1A
-1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A.
3
CET [ CHINO-EXCEL TECHNOLOGY ]
