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CEU1012L 参数 Datasheet PDF下载

CEU1012L图片预览
型号: CEU1012L
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 425 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEU1012L的Datasheet PDF文件第1页浏览型号CEU1012L的Datasheet PDF文件第2页浏览型号CEU1012L的Datasheet PDF文件第4页  
CED1012L/CEU1012L  
12  
10  
8
20  
VGS=10,9,8,7,6,5,4V  
25 C  
15  
V
GS=3V  
6
10  
4
TJ=125 C  
5
-55 C  
2
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
VDS, Drain-to-Source Voltage (V)  
VGS, Gate-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
3000  
2500  
2000  
1500  
1000  
500  
ID=10A  
VGS=5V  
C
iss  
C
oss  
C
rss  
0
-100  
-50  
0
50  
100  
150  
200  
0
5
10  
15  
20  
25  
VDS, Drain-to-Source Voltage (V)  
TJ, Junction Temperature( C)  
Figure 3. Capacitance  
Figure 4. On-Resistance Variation  
with Temperature  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VDS=VGS  
ID=250µA  
V
GS=0V  
101  
100  
10-1  
-50 -25  
0
25 50 75 100 125 150  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
TJ, Junction Temperature( C)  
VSD, Body Diode Forward Voltage (V)  
Figure 5. Gate Threshold Variation  
with Temperature  
Figure 6. Body Diode Forward Voltage  
Variation with Source Current  
3
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