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CEU1012L 参数 Datasheet PDF下载

CEU1012L图片预览
型号: CEU1012L
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 425 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEU1012L的Datasheet PDF文件第1页浏览型号CEU1012L的Datasheet PDF文件第3页浏览型号CEU1012L的Datasheet PDF文件第4页  
CED1012L/CEU1012L  
Electrical Characteristics T = 25 C unless otherwise noted  
c
Parameter  
Off Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage Current, Forward  
Gate Body Leakage Current, Reverse  
On Characteristics b  
BVDSS  
IDSS  
VGS = 0V, ID = 250µA  
VDS = 120V, VGS = 0V  
VGS = 20V, VDS = 0V  
VGS = -20V, VDS = 0V  
120  
V
25  
µA  
nA  
nA  
IGSSF  
IGSSR  
100  
-100  
6
Gate Threshold Voltage  
VGS(th)  
RDS(on)  
VGS = VDS, ID = 250µA  
VGS = 5V, ID = 10A  
1
3
V
Static Drain-Source  
100  
120  
m  
On-Resistance  
Dynamic Characteristics c  
Forward Transconductance  
gFS  
Ciss  
Coss  
Crss  
VDS = 10V, ID = 5A  
10  
955  
180  
70  
S
Input Capacitance  
pF  
pF  
pF  
VDS = 25V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics c  
Turn-On Delay Time  
Turn-On Rise Time  
td(on)  
tr  
td(off)  
tf  
21  
28  
104  
27  
39  
4
42  
56  
ns  
ns  
VDD = 30V, ID = 15A,  
VGS = 5V, RGEN = 20Ω  
Turn-Off Delay Time  
Turn-Off Fall Time  
208  
54  
ns  
ns  
Total Gate Charge  
Qg  
51.8  
nC  
nC  
nC  
VDS = 96V, ID = 10A,  
VGS = 5V  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
8.3  
Drain-Source Diode Characteristics and Maximun Ratings  
Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage b  
IS  
10  
A
V
VSD  
VGS = 0V, IS = 10A  
1.2  
Notes :  
a.Repetitive Rating : Pulse width limited by maximum junction temperature.  
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.  
c.Guaranteed by design, not subject to production testing.  
2
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