CED1012L/CEU1012L
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 120V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
120
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 5V, ID = 10A
1
3
V
Static Drain-Source
100
120
mΩ
On-Resistance
Dynamic Characteristics c
Forward Transconductance
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 5A
10
955
180
70
S
Input Capacitance
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
21
28
104
27
39
4
42
56
ns
ns
VDD = 30V, ID = 15A,
VGS = 5V, RGEN = 20Ω
Turn-Off Delay Time
Turn-Off Fall Time
208
54
ns
ns
Total Gate Charge
Qg
51.8
nC
nC
nC
VDS = 96V, ID = 10A,
VGS = 5V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
8.3
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
10
A
V
VSD
VGS = 0V, IS = 10A
1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2