CED02N6/CEU02N6
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
C
Typ Max
Parameter
Condition
Min
Unit
Symbol
DRAIN-SOURCE AVALANCHE RATINGa
Single Pulse Drain-Source
Avalanche Energy
V
DD =50V, L=60mH
mJ
A
E
AS
125
2
R =9.1
G
Ω
6
Maximum Drain-Source
Avalanche Current
I
AS
OFF CHARACTERISTICS
V
GS = 0V,I
D
= 250µA
Drain-Source Breakdown Voltage
600
V
BVDSS
µA
25
I
DSS
GSS
V
DS = 600V, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS
=
30V, VDS = 0V
Ć
I
nA
100
Ć
ON CHARACTERISTICSa
V
GS(th)
2
2
4
V
Gate Threshold Voltage
V
DS = VGS, I
D
= 250µA
RDS(ON)
3.8
1.2
Ω
Drain-Source On-State Resistance
5.0
V
GS =10V, I
D
= 1A
V
GS = 10V, VDS = 10V
On-State Drain Current
I
D(ON)
A
S
gFS
Forward Transconductance
V
DS = 50V, I
D
= 1A
SWITCHING CHARACTERISTICSb
Turn-On Delay Time
18
18
t
D(ON)
35
35
ns
ns
V
DD = 300V,
= 2A,
I
V
D
Rise Time
t
r
GS = 10V
Turn-Off Delay Time
Fall Time
t
D(OFF)
90
40
25
ns
ns
nC
50
16
20
R
GEN=18
Ω
t
f
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS =480V, I
D
= 2A,
Q
gs
gd
2
nC
nC
VGS =10V
Q
12
6-78
CET [ CHINO-EXCEL TECHNOLOGY ]
