CES2324
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 16V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 4.2A
VGS = 2.5V, ID = 3.6A
VDS = 10V, ID = 4.0A
0.5
1.5
45
80
V
35
50
8
mΩ
mΩ
S
7
On-Resistance
Forward Transconductance
Dynamic Characteristics d
Input Capacitance
Ciss
Coss
Crss
500
300
140
pF
pF
pF
VDS = 8V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
td(on)
tr
td(off)
tf
20
18
60
28
10
2.3
2.9
40
40
ns
ns
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
108
56
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
15
nC
nC
nC
VDS = 10V, ID = 4.2A,
VGS = 4.5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
1.3
1.2
A
V
VSD
VGS = 0V, IS = 1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
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