N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 4.2A, R
DS(ON)
= 45mΩ @V
GS
= 4.5V.
R
DS(ON)
= 80mΩ @V
GS
= 2.5V.
High dense cell design for extremely low R
DS(ON)
.
Lead free product is acquired.
Rugged and reliable.
SOT-23 package.
CES2324
D
D
G
SOT-23
G
S
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
20
Units
V
V
A
A
W
C
±
12
4.2
16
1.25
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
100
Units
C/W
Details are subject to change without notice .
7 - 26
Rev 1. 2006.May
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