CES2307
10
8
5
4
3
2
1
0
-VGS=10,8,6V
25 C
-VGS=5V
-VGS=4V
6
4
TJ=125 C
2
0
-55 C
-VGS=3V
0
1
2
3
4
5
0
1.0
2.0
3.0
4.0
5.0
6.0
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
900
750
600
450
300
150
0
ID=-3.2A
VGS=-10V
C
iss
C
oss
C
rss
-100
-50
0
50
100
150
200
0
5
10
15
20
25
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
V
GS=0V
ID=-250µA
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3