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CES2307 参数 Datasheet PDF下载

CES2307图片预览
型号: CES2307
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 404 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CES2307  
Electrical Characteristics TA = 25 C unless otherwise noted  
Parameter  
Off Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage Current, Forward  
Gate Body Leakage Current, Reverse  
On Characteristics c  
BVDSS  
IDSS  
VGS = 0V, ID = -250µA  
VDS = -30V, VGS = 0V  
VGS = 20V, VDS = 0V  
VGS = -20V, VDS = 0V  
-30  
V
-1  
µA  
nA  
nA  
IGSSF  
IGSSR  
100  
-100  
Gate Threshold Voltage  
Static Drain-Source  
VGS(th)  
RDS(on)  
VGS = VDS, ID = -250µA  
VGS = -10V, ID = -3.2A  
VGS = -4.5V, ID = -2.5A  
-1  
-3  
78  
V
60  
95  
m  
mΩ  
On-Resistance  
Dynamic Characteristics d  
120  
gFS  
Ciss  
Coss  
Crss  
Forward Transconductance  
VDS = -10V, ID = -3.2A  
5
S
Input Capacitance  
640  
130  
95  
pF  
VDS = -15V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics d  
Turn-On Delay Time  
Turn-On Rise Time  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
11  
5
22  
10  
ns  
ns  
VDD = -15V, ID= -1A,  
VGS = -10V, RGEN = 6Ω  
Turn-Off Delay Time  
Turn-Off Fall Time  
30  
7
60  
ns  
14  
ns  
Total Gate Charge  
Qg  
9.5  
3.4  
1.7  
12.5  
nC  
nC  
nC  
VDS = -15V, ID = -3.2A,  
VGS = -10V  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
Drain-Source Diode Characteristics and Maximun Ratings  
Drain-Source Diode Forward Current b  
Drain-Source Diode Forward Voltage c  
IS  
-3.2  
-1.2  
A
V
VSD  
VGS = 0V, IS = -0.75A  
Notes :  
a.Repetitive Rating : Pulse width limited by maximum junction temperature.  
b.Surface Mounted on FR4 Board, t < 5 sec.  
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.  
d.Guaranteed by design, not subject to production testing.  
2
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