CER6080
P-CHANNEL
25
5
4
3
2
1
0
-VGS=10,8,6,5V
20
15
10
5
25 C
-VGS=3.
0V
TJ=125 C
-55 C
4.0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
5.0
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 7. Output Characteristics
Figure 8. Transfer Characteristics
1200
1000
800
600
400
200
0
2.2
1.9
1.6
1.3
1.0
0.7
0.4
ID=-3.3A
VGS=-10V
C
iss
C
oss
C
rss
0
6
12
18
24
30
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 9. Capacitance
Figure 10. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
V
GS=0V
ID=-250µA
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 11. Gate Threshold Variation
with Temperature
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5