欢迎访问ic37.com |
会员登录 免费注册
发布采购

CER6080 参数 Datasheet PDF下载

CER6080图片预览
型号: CER6080
PDF下载: 下载PDF文件 查看货源
内容描述: 双增强模式场效应晶体管( N和P沟道) [Dual Enhancement Mode Field Effect Transistor (N and P Channel)]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 7 页 / 415 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CER6080的Datasheet PDF文件第1页浏览型号CER6080的Datasheet PDF文件第2页浏览型号CER6080的Datasheet PDF文件第4页浏览型号CER6080的Datasheet PDF文件第5页浏览型号CER6080的Datasheet PDF文件第6页浏览型号CER6080的Datasheet PDF文件第7页  
CER6080  
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted  
Parameter  
Off Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage Current, Forward  
Gate Body Leakage Current, Reverse  
On Characteristics  
BVDSS  
IDSS  
VGS = 0V, ID = -250µA  
VDS = -60V, VGS = 0V  
VGS = 20V, VDS = 0V  
VGS = -20V, VDS = 0V  
-60  
V
-1  
µA  
nA  
nA  
IGSSF  
IGSSR  
100  
-100  
6
Gate Threshold Voltage  
Static Drain-Source  
VGS(th)  
RDS(on)  
VGS = VDS, ID = -250µA  
VGS = -10V, ID = -3.3A  
VGS = -4.5V, ID = -2.6A  
-1  
-3  
V
105  
135  
130  
180  
mΩ  
mΩ  
On-Resistance  
Dynamic Characteristics c  
Forward Transconductance  
Input Capacitance  
gFS  
Ciss  
Coss  
Crss  
VDS = -15V, ID = -3.3A  
8
S
890  
85  
pF  
pF  
pF  
VDS = -30V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics c  
Turn-On Delay Time  
85  
td(on)  
tr  
td(off)  
tf  
11  
3
20  
5
ns  
ns  
VDD = -30V, ID = -1A,  
VGS = -10V, RGEN = 6Ω  
Turn-On Rise Time  
Turn-Off Delay Time  
30  
4
60  
10  
14  
ns  
Turn-Off Fall Time  
ns  
Total Gate Charge  
Qg  
10.7  
2.1  
1.1  
nC  
nC  
nC  
VDS = -30V, ID = -3.3A,  
VGS = -10V  
Gate-Source Charge  
Qgs  
Qgd  
Gate-Drain Charge  
Drain-Source Diode Characteristics and Maximun Ratings  
Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage b  
IS  
-3.3  
-1.2  
A
V
VSD  
VGS = 0V, IS = -1.3A  
Notes :  
a.Repetitive Rating : Pulse width limited by maximum junction temperature.  
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.  
c.Guaranteed by design, not subject to production testing.  
3