CEPF630B/CEBF630B
CEIF630B/CEFF630B
18
15
12
9
VGS=10,9,8V
101
V
GS=7V
TJ=150 C
-55 C
100
6
V
GS=6V
GS=5V
3
1.VDS=40V
2.Pulse Test
V
25 C
10-1
0
0
2
4
6
8
2
4
6
8
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
900
750
600
450
300
150
0
ID=4.5A
VGS=10V
C
iss
C
oss
C
rss
-100
-50
0
50
100
150
200
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 196
CET [ CHINO-EXCEL TECHNOLOGY ]
