CEPF630B/CEBF630B
CEIF630B/CEFF630B
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 200V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
200
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 4.5A
2
4
V
Ω
S
0.34
7
0.4
On-Resistance
Forwand Transconductance
Dynamic Characteristics c
Input Capacitance
VDS = 40V, ID = 4.5A
Ciss
Coss
Crss
550
100
30
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
25
84
72
77
22
3
50
150
130
140
29
ns
ns
VDD = 100V, ID = 9A,
VGS = 10V, RGEN = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-On Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = 160V, ID = 9A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
12
Drain-Source Diode Characteristics and Maximun Ratings
g
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
9
A
V
VSD
VGS = 0V, IS = 9A
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L = 3mH, I = 9A, V = 50V, R = 25Ω, Starting T = 25 C .
AS
DD
G
J
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package I
= 6A .
S(max)
4 - 195
CET [ CHINO-EXCEL TECHNOLOGY ]
