CEP21A3/CEB21A3
1.15
1.30
ID=250ijA
V
DS=VGS
1.10
1.20
I
D
=250ijA
4
1.10
1.00
0.90
1.05
1.00
0.95
0.90
0.85
0.80
0.70
0.60
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
50
40
30
50
10
20
10
1.0
0.1
V
DS=10V
0
5
1.4
0
10
15
20
0.6
0.8
1.0
1.2
1.6
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
70
10
100
V
DS=15V
ij
s
8
6
ON)Limit
(
I
D=6A
RDS
20
10
1ms
10ms
DC
4
V
GS=10V
2
0
Single Pulse
Tc=25 C
1
0.5
30
9
0
3
6
12
1
10
100
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
4-170