CEP21A3/CEB21A3
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
4
4
TypC Max
Parameter
Condition
Min
Unit
Symbol
OFF CHARACTERISTICS
V
GS = 0V, ID=250µA
Drain-Source Breakdown Voltage
30
V
BVDSS
µA
nA
1
I
DSS
GSS
V
DS = 30V, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS
=
20V, VDS = 0V
I
Ć
100
Ć
ON CHARACTERISTICSa
V
GS(th)
2.5
45
70
V
Gate Threshold Voltage
V
DS = VGS, I
D
= 250µA
0.8
20
mΩ
mΩ
36
55
V
V
V
V
GS = 10V, I
D
= 12A
RDS(ON)
Drain-Source On-State Resistance
GS = 4.5V, I =15A
D
DS = 10V, VGS = 10V
On-State Drain Current
I
D(ON)
A
S
gFS
20
Forward Transconductance
DS = 10V, I = 12A
D
DYNAMIC CHARACTERISTICSb
364
197
62
Input Capacitance
P
F
C
ISS
V
DS =15V, VGS = 0V
P
P
F
F
Output Capacitance
COSS
f =1.0MH
Z
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICSb
CRSS
Turn-On Delay Time
t
D(ON)
25
15
ns
ns
12
5
V
DD = 15V,
= 12A
I
D
Rise Time
t
r
VGS = 10V,
Turn-Off Delay Time
Fall Time
t
D(OFF)
14
14
10
2
30
30
15
ns
ns
R
GEN =2.5Ω
t
f
nC
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
DS = 15V,I
GS = 10V
D
= 6A
Q
gs
gd
nC
nC
Q
3
4-168
CET [ CHINO-EXCEL TECHNOLOGY ]
