CEP16N10L/CEB16N10L
20
15
10
20
25 C
VGS=10,8,6,5V
15
VGS=4.0
V
10
5
5
0
TJ=125 C
1.0
-55 C
0
0
1
2
3
4
5
0.0
2.0
3.0
4.0
5.0
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
800
2.2
1.9
1.6
1.3
1.0
0.7
0.4
ID=7A
VGS=10V
700
600
C
iss
500
400
300
200
100
0
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.2
0.6
1.0
1.4
1.8
2.2
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
