CEP16N10L/CEB16N10L
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain-Source
VGS = VDS, ID = 250µA
VGS = 10V, ID = 7A
1
3
V
mΩ
95
100
5
115
125
On-Resistance
VGS = 5V, ID = 5.5A
VDS = 10V, ID = 7A
mΩ
S
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
640
110
30
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
10
2.8
73
7.5
16
2
30
7
ns
ns
VDD =50V, ID = 15A,
VGS = 10V, RGEN = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
150
15
25
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = 80V, ID = 15A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
3
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
15.2
1.5
A
V
VSD
VGS = 0V, IS = 15.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d. L=0.5mH, I =13.3A, VDD=25V, R =25Ω, Starting T =25 C
AS
G
J
2
CET [ CHINO-EXCEL TECHNOLOGY ]
