CEM7350
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
V
5
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2.1A
2
4
V
150
190
mΩ
On-Resistance
Dynamic Characteristics d
Input Capacitance
Ciss
Coss
Crss
316
93
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
37
td(on)
tr
td(off)
tf
12
10
25
20
55
35
16
ns
ns
VDD = 50V, ID = 1A,
VGS = 10V, RGEN = 22Ω
Turn-On Rise Time
Turn-Off Delay Time
30
ns
Turn-Off Fall Time
18
ns
Total Gate Charge
Qg
12.4
2.0
5.4
nC
nC
nC
VDS = 80V, ID = 2.1A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
1.8
1.3
A
V
VSD
VGS = 0V, IS = 1.8A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
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