CEM7350
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
100V, 2.6A, R
DS(ON)
= 190mΩ @V
GS
= 10V.
-100V, -2.0A, R
DS(ON)
= 320mΩ @V
GS
= -10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
D
1
D
1
7
D
2
6
D
2
5
Lead free product is acquired.
Surface mount Package.
8
SO-8
1
1
S
1
2
G
1
3
S
2
4
G
2
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
N-Channel
100
P-Channel
-100
Units
V
V
A
A
W
C
±
20
2.6
10
2.0
-55 to 150
±
20
-2.0
-8.0
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
62.5
Units
C/W
2005.August
1
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