欢迎访问ic37.com |
会员登录 免费注册
发布采购

CEM2539A 参数 Datasheet PDF下载

CEM2539A图片预览
型号: CEM2539A
PDF下载: 下载PDF文件 查看货源
内容描述: 双增强模式场效应晶体管( N和P沟道) [Dual Enhancement Mode Field Effect Transistor (N and P Channel)]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 7 页 / 617 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEM2539A的Datasheet PDF文件第1页浏览型号CEM2539A的Datasheet PDF文件第2页浏览型号CEM2539A的Datasheet PDF文件第3页浏览型号CEM2539A的Datasheet PDF文件第5页浏览型号CEM2539A的Datasheet PDF文件第6页浏览型号CEM2539A的Datasheet PDF文件第7页  
CEM2539A  
N-CHANNEL  
25  
10  
8
VGS=10,8,6,3V  
20  
15  
10  
5
6
5
4
V
GS=2V  
25 C  
2
-55 C  
TJ=125 C  
0.5  
0
0
0
0.0  
0.3  
0.6  
0.9  
1.2  
1.0  
1.5  
2.0  
2.5  
VDS, Drain-to-Source Voltage (V)  
VGS, Gate-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
2.2  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
1260  
1050  
840  
630  
420  
210  
0
ID=6A  
VGS=10V  
C
iss  
C
oss  
C
rss  
0
2
4
6
8
10  
-100  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature( C)  
VDS, Drain-to-Source Voltage (V)  
Figure 4. On-Resistance Variation  
with Temperature  
Figure 3. Capacitance  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VDS=VGS  
ID=250µA  
V
GS=0V  
101  
100  
10-1  
-50 -25  
0
25 50 75 100 125 150  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
TJ, Junction Temperature( C)  
VSD, Body Diode Forward Voltage (V)  
Figure 5. Gate Threshold Variation  
with Temperature  
Figure 6. Body Diode Forward Voltage  
Variation with Source Current  
4