CEM2539A
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS =10V, ID = 7.3A
VGS = 4.5V, ID = 6.4A
VGS = 2.5V, ID = 4.5A
0.6
2
V
18
20
26
22
25
40
mΩ
mΩ
mΩ
7
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Input Capacitance
Ciss
Coss
Crss
910
230
165
pF
pF
pF
VDS = 8V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
13
9.5
34
26
19
68
20
13
ns
ns
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6Ω
Turn-Off Delay Time
Turn-Off Fall Time
ns
10
ns
Total Gate Charge
Qg
10
nC
nC
nC
VDS = 10V, ID =6A,
VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
1.4
3.1
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
7.5
1
A
V
VSD
VGS = 0V, IS = 1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2