CEG9926
1.15
1.10
1.05
1.00
1.60
V
DS=VGS
ID=250ijA
1.40
ID=250ijA
1.20
1.00
0.95
0.80
0.60
0.40
0.90
0.85
-50 -25
0
50
100 125
150
25
75
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
30
20
10
25
20
9
15
10
1
V
DS=10V
5
0
0.1
0.4
0
3
6
9
12
15
0.6
0.8
1.0
1.2
1.4
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
2
10
5
V
DS=10V
4
3
2
1
I
D=4.5A
10
t
imi
L
N)
O
S(
D
R
0
10
-1
10
TA=25 C
Tj=150 C
Single Pulse
1
0
-2
10
2
1
-1
-2
0
10
10
10
10
10
8
0
2
4
6
10 12 14 16
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
9-20
CET [ CHINO-EXCEL TECHNOLOGY ]
