CEG9926
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
C
Typ Max
Parameter
Condition
Min
Unit
Symbol
OFF CHARACTERISTICS
V
GS= 0V, I
D
=250µA
Drain-Source Breakdown Voltage
20
V
BVDSS
µA
nA
I
DSS
GSS
V
DS=20V, VGS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
VGS=Ć8V, VDS=0V
I
ĆȑȐȐ
ON CHARACTERISTICSb
V
GS(th)
0.5
10
1.0
V
Gate Threshold Voltage
V
DS=VGS, I
D
=250µA
30
24
V
GS=4.5V, I
GS=4.0V, I
GS=2.5V, I
D=4.5A
mΩȀȀȀ
RDS(ON)
Drain-Source On-State Resistance
23
V
D=5A
mΩ
mΩ
9
32
40
V
D=3.5A
V
DS=5V, VGS=4.5V
On-State Drain Current
I
D(ON)
A
S
gFS
Forward Transconductance
V
DS=10V, I
D
=4.5A
10
DYNAMIC CHARACTERISTICSC
Input Capacitance
P
F
500
300
140
C
ISS
V
DS = 8V, VGS = 0V
P
P
F
F
Output Capacitance
COSS
f =1.0MH
Z
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSC
Turn-On Delay Time
t
D(ON)
40
40
ns
ns
ns
ns
nC
20
18
60
28
10
V
DD = 10V,
=1A,
I
V
D
Rise Time
t
r
GEN = 4.5V,
Turn-Off Delay Time
Fall time
t
D(OFF)
108
56
Ω
R
GEN =
6
t
f
Q
g
15
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS =10V, I
D
=4.5A,
Q
gs
gd
2.3
2.9
nC
nC
VGS =4.5V
Q
9-18
CET [ CHINO-EXCEL TECHNOLOGY ]
