CEG8208
20
16
12
8
20
16
12
8
25 C
VGS=4.5,3.5,2.5V
VGS=1.5
V
4
0
4
-55 C
TJ=125 C
0.5
0
0
0.5
1
1.5
2
0.0
1.0
1.5
2.0
2.5
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
ID=5A
VGS=4.5V
V
GS=0V
101
100
10-1
-100
-50
0
50
100
150
200
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage (V)
TJ, Junction Temperature( C)
Figure 4. Body Diode Forward Voltage
Variation with Source Current
Figure 3. On-Resistance Variation
with Temperature
102
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
RDS(ON)Limit
1ms
10ms
100ms
1s
DC
101
100
10-1
10-2
TA=25 C
TJ=150 C
Single Pulse
10-2
10-1
100
101
102
-50 -25
0
25 50 75 100 125 150
VDS, Drain-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 6. Maximum Safe
Operating Area
Figure 5. Gate Threshold Variation
with Temperature
3
CET [ CHINO-EXCEL TECHNOLOGY ]
