CEG8208
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
V
1
10
µA
uA
uA
IGSSF
IGSSR
-10
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 4A
0.5
1.2
22
32
V
18
24
mΩ
mΩ
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 5A
17
40
S
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
115
15
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
0.35
0.87
3.60
2.01
4.3
0.7
1.8
7.5
4.3
7.5
us
us
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
us
Turn-Off Fall Time
us
Total Gate Charge
Qg
nC
nC
nC
VDS = 10V, ID =5A,
VGS = 4.5V
Gate-Source Charge
Qgs
Qgd
1.1
Gate-Drain Charge
2.5
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
1.5
1.2
A
V
VSD
VGS = 0V, IS = 1.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 board,t < 10sec.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2