CEP13N5/CEB13N5
CEF13N5
24
20
16
12
8
20
25 C
VGS=10,9,8,7V
15
V
GS=6V
10
TJ=125 C
5
V
GS=5V
4
-55 C
0
0
0
5
10
15
20
25
30
0
2
4
6
8
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.6
2.2
1.8
1.4
1.0
0.6
0.2
2400
2000
1600
1200
800
400
0
ID=6.5A
VGS=10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
175
25 50 75 100 125 150
-50 -25
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
