N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP13N5
CEB13N5
CEF13N5
V
DSS
500V
500V
500V
R
DS(ON)
0.48Ω
0.48Ω
0.48Ω
I
D
13A
13A
13A
d
CEP13N5/CEB13N5
CEF13N5
PRELIMINARY
@V
GS
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
G
G
D
S
G
CEP SERIES
TO-220
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T
C
= 25 C
Drain Current-Continuous @ T
C
= 100 C
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
V
DS
V
GS
I
D
I
D
I
DM
P
D
T
J
,T
stg
e
TO-220F
Units
V
V
500
±
30
13
8
52
214
1.43
-55 to 175
13
52
d
A
A
A
W
W/ C
C
8
d
d
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
60
0.4
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
0.7
62.5
Limit
2.5
65
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2009.Nov.
http://www.cetsemi.com