CEF07N8
2.2
1.9
1800
Ciss
1500
ID=4
VGS=10V
1.6
1.3
1200
900
600
1.0
Coss
300
0.7
0.4
Crss
64
0
25
0
5
10
15
20
-100
-50
0
50
100
200
150
TJ, Junction Temperature( C)
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
1.15
1.30
1.20
ID=250ijA
V
DS=VGS
=250ijA
1.10
I
D
1.10
1.0
1.05
1.00
0.90
0.95
0.90
0.85
0.80
0.70
0.60
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
20
4
V
GS=0V
10
V
DS=50V
3
2
1
1
0
0.1
1
4
0
2
3
0.4
1.2
0.6
1.0
0.8
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
6-140
CET [ CHINO-EXCEL TECHNOLOGY ]
