CEF07N8
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Typ Max
Unit
Parameter
DYNAMIC CHARACTERISTICSb
Condition
Min
Symbol
1500
125
50
Input Capacitance
P
F
C
ISS
OSS
RSS
V
DS =25V, VGS = 0V
64
P
P
F
F
Output Capacitance
C
f =1.0MH
Z
Reverse Transfer Capacitance
DRAIN-SOURCE DIODE CHARACTERISTICS a
C
Diode Forward Voltage
V
V
SD
V
GS = 0V, Is =4A
1.5
Notes
ś
ś
a.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
6
VGS=10,9,8,7V
5
10
1
4
VGS=6V
150 C
3
2
VGS=5V
-55 C
1.VDS=40V
2.Pulse Test
1
25 C
0.1
0
2
4
10
8
6
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
6-139
CET [ CHINO-EXCEL TECHNOLOGY ]
