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CEB10N6 参数 Datasheet PDF下载

CEB10N6图片预览
型号: CEB10N6
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 400 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEB10N6的Datasheet PDF文件第1页浏览型号CEB10N6的Datasheet PDF文件第2页浏览型号CEB10N6的Datasheet PDF文件第4页  
CEP10N6/CEB10N6  
CEF10N6  
12  
10  
8
12  
10  
8
VGS=10,9,8,7,6,5V  
6
6
4
4
25 C  
V
GS=4V  
2
2
TJ=125C  
1.5  
-55 C  
6.0  
0
0
0
5
10  
15  
20  
25  
30  
0
3.0  
4.5  
7.5  
VDS, Drain-to-Source Voltage (V)  
VGS, Gate-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2400  
2000  
1600  
1200  
800  
400  
0
ID=8.5A  
VGS=10V  
C
iss  
C
oss  
C
rss  
-100  
-50  
0
50  
100  
150  
200  
0
5
10  
15  
20  
25  
VDS, Drain-to-Source Voltage (V)  
TJ, Junction Temperature( C)  
Figure 3. Capacitance  
Figure 4. On-Resistance Variation  
with Temperature  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VDS=VGS  
ID=250µA  
V
GS=0V  
101  
100  
10-1  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
-50 -25  
0
25 50 75 100 125 150  
TJ, Junction Temperature( C)  
VSD, Body Diode Forward Voltage (V)  
Figure 5. Gate Threshold Variation  
with Temperature  
Figure 6. Body Diode Forward Voltage  
Variation with Source Current  
3
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