欢迎访问ic37.com |
会员登录 免费注册
发布采购

CEB10N6 参数 Datasheet PDF下载

CEB10N6图片预览
型号: CEB10N6
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 400 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEB10N6的Datasheet PDF文件第1页浏览型号CEB10N6的Datasheet PDF文件第3页浏览型号CEB10N6的Datasheet PDF文件第4页  
CEP10N6/CEB10N6  
CEF10N6  
Electrical Characteristics T = 25 C unless otherwise noted  
c
Parameter  
Off Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
Drain-Source Breakdown Voltage  
BVDSS  
IDSS  
VGS = 0V, ID = 250µA  
VDS = 600V, VGS = 0V  
600  
V
1
µA  
µA  
nA  
nA  
Zero Gate Voltage Drain Current  
VDS = 480V, T = 125 C  
c
10  
Gate Body Leakage Current, Forward  
Gate Body Leakage Current, Reverse  
On Characteristics b  
Gate Threshold Voltage  
Static Drain-Source  
IGSSF  
VGS = 30V, VDS = 0V  
VGS = -30V, VDS = 0V  
100  
-100  
IGSSR  
VGS(th)  
RDS(on)  
VGS = VDS, ID = 250µA  
VGS = 10V, ID = 5A  
2
4
V
0.65  
0.75  
On-Resistance  
Dynamic Characteristics c  
Input Capacitance  
Ciss  
Coss  
Crss  
1760  
220  
20  
pF  
pF  
pF  
VDS = 25V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics c  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
32.5  
61  
ns  
ns  
VDD = 300V, ID =10A,  
VGS = 10V, RGEN = 25  
Turn-On Rise Time  
Turn-Off Delay Time  
150  
60  
ns  
Turn-Off Fall Time  
ns  
Total Gate Charge  
Qg  
44  
nC  
nC  
nC  
VDS = 480V, ID = 10A,  
VGS = 10V  
Gate-Source Charge  
Qgs  
Qgd  
7.7  
17  
Gate-Drain Charge  
Drain-Source Diode Characteristics and Maximun Ratings  
f
IS  
Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage b  
10  
A
V
VSD  
VGS = 0V, IS = 10A g  
1.4  
Notes :  
a.Repetitive Rating : Pulse width limited by maximum junction temperature .  
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .  
c.Guaranteed by design, not subject to production testing.  
d.Limited only by maximum temperature allowed .  
e.Pulse width limited by safe operating area .  
f.Full package I  
= 6A .  
S(max)  
g.Full package V test condition I = 6A .  
SD  
S
h.L = 15mH, I = 8.5A, V = 50V, R = 25Ω, Starting T = 25 C  
AS  
DD  
G
J
2
 复制成功!