NEZ6472-4D/4DL,-8D/8DL,-15D/15DL
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
NEZ6472-4D/4DL
NEZ6472-8D/8DL
NEZ6472-15D/15DL
VDS
VGS
VGD
IDS
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
V
V
15
-12
15
-12
15
-12
V
-18
-18
-18
A
IDSS
IDSS
IDSS
IGRF
TCH
TSTG
Gate Current
mA
°C
°C
W
25
50
100
Channel Temperature
Storage Temperature
Total Power Dissipation
175
175
175
-65 to +175
25
-65 to +175
50
-65 to +175
100
PT
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
MAXIMUM OPERATING LIMITS
PART NUMBER
Rg MAX1
IGRF MAX
mA
VDS MAX
V
Ω
NEZ6472-4D/4DL
NEZ6472-8D/8DL
NEZ6472-15D/15DL
Note:
200
100
50
5
10
10
10
10
20
1. Rg MAX is the maximum recommended series resistance
between the Gate Supply and the FET Gate.
TYPICAL PERFORMANCE CURVES (TC = 25°C)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER
(-15D/DL)
INTERMODULATION DISTORTION
vs. OUTPUT POWER
6.0
-20
44
41
38
POUT
-15DL
5.0
4.0
-8DL
-30
-4DL
-40
3.0
2.0
1.0
0.0
35
32
29
26
IDS
-50
IM
3
-60
I
GS
-70
-80
23
20
1.0
2.0
IM
5
22
26
30
34
38
42
14
17
20
23
26
29
32
35
38
Total Output Power, POUT (dBm)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER (-8D/DL)
Input Power, PIN (dBm)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER (-4D/DL)
4.0
41
39
36
33
30
27
2.0
1.0
POUT
3.0
36
P
OUT
I
DS
35
32
29
2.0
1.0
0.0
I
DS
0.0
1.0
I
GS
I
GS
24
21
-1.0
-2.0
26
23
16
19
22
25
28
31
34
14
17
20
23
26
29
32
Input Power, PIN (dBm)
Input Power, PIN (dBm)
CEL [ CALIFORNIA EASTERN LABS ]
