C-BAND INTERNALLY
MATCHED POWER GaAs MESFET
FEATURES
•
HIGH P
OUT
18W (42.5 dBm) Typ P
1dB
for NEZ6472-15D/15DL
9W (39.5 dBm) Typ P
1dB
for NEZ6472-8D/8DL
4.5W (36.5 dbm) Typ P
1dB
for NEZ6472-4D/4DL
HIGH EFFICIENCY
35%
η
ADD
for 4.5W Device
33%
η
ADD
for 9W Device
32%
η
ADD
for 18W Device
LOW IMD
-45 dBc IM
3
@ 31.5 dBm P
OUT
(SCL) -15DL
-45 dBc IM
3
@ 29 dBm P
OUT
(SCL) -8DL
-45 dBc IM
3
@ 26 dBm P
OUT
(SCL) -4DL
SiO
2
PASSIVATED CHIP
For Power/Gain Stability Under RF Overdrive
CLASS A OPERATION
INTERNALLY MATCHED (IN/OUT)
SUPERIOR GAIN FLATNESS
INDUSTRY COMPATIBLE HERMETIC PACKAGES
= 25°C)
NEZ6472-4D
NEZ6472-4DL
T-61
NEZ6472-8D
NEZ6472-8DL
T-61
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
1dB
PARAMETERS AND CONDITIONS
Output Power at P
IdB1
I
DSQ
= 0.8A, (RF Off)
I
DSQ
= 1.6A
I
DSQ
= 4.0A
45
-15D
-8D
-4D
40
NEZ6472-15D
NEZ6472-15DL
NEZ6472-8D
NEZ6472-8DL
NEZ6472-4D
NEZ6472-4DL
OUTPUT POWER AND EFFICIENCY
vs. INPUT POWER
100%
80%
P
OUT
•
35
60%
Efficiency
30
•
40%
25
20%
•
•
•
•
•
20
12
17
22
27
32
37
0%
Input Power, P
IN
(dBm)
ELECTRICAL CHARACTERISTICS
(T
C
NEZ6472-15D
NEZ6472-15DL
T-65
TYP MAX TEST CONDITIONS
V
DS
= 10V
f = 6.4
to 7.2 GHz
6.0
Zs = Z
L
50 ohms
V
DS
= I0V
f
1
= 7.19 GHz
f
2
= 7.20 GHZ
2 Equal Tones
UNITS MIN TYP MAX MIN
dBm 35.5 36.5
dBm
dBm
1.5
7.5
-42
TYP MAX MIN
38.5
39.5
41.5
33
2.2
8.5
3.0
7.0
42.5
32
4.4
8.0
η
ADD
I
DS
G
L
IM
3
-XDL
Option
Only
I
DSS
V
P
BV
DGO
g
m
R
TH(CH-C)
∆T
(CH-C)
Power Added Efficiency @ P
1dB
%
35
Drain Current at P
1dB
A
1.1
Linear Gain
dB
8.0 9.0
3rd Order Intermodulation Distortion
3
at
Pout = 26 dBm SCL
2
, I
DSQ
= 0.5 x I
DSS
dBc
-45
2
, I
DSQ
= 0.5 x I
DSS
Pout = 29 dBm SCL
dBc
Pout = 31.5 dBm SCL
2
, I
DSQ
= 0.5 x I
DSS
dBc
Saturated Drain Current, V
GS
= 0 V
A
1.0 2.3
Pinch Off Voltage
I
DS
= 15 mA
V
-3.5 -2.0
I
DS
= 30 mA
V
I
DS
= 60 mA
V
Drain - Gate Breakdown Voltage
I
DG
= 15 mA
V
20
22
I
DG
= 30 mA
V
I
DG
= 60 mA
V
Transconductance
I
DS
= I A
mS
1300
I
DS
= 2 A
mS
I
DS
= 4 A
mS
Thermal Resistance (Channel to Case)
°C/W
5.0
Channel Temperature Rise
4
°C
-45
3.5
-0.5
-3.5
-2.0
2.0
4.5
-42
7.0
4.0
-45
9.2
-42
14.0
V
DS
= 2.5 V
-0.5
-3.5
-2.2
-0.5
20
22
20
22
2600
6.0
48
2.5
3.0
48
5200
1.3
1.5
60
Notes:
1. P
1dB
: Ouptut Power at the 1dB Gain Compression Point.
2. SCL: Single Carrier Level.
3. Maximum Spec Applies to -XDL Option Only.
4.
∆T
(CH-C)
= T
CH
- T
C
= 10 V x I
DSQ
x R
TH (CH-C) MAX
.
California Eastern Laboratories
Power Added Efficiency,
η
ADD
(%)
Output Power, P
OUT
(dBm)
CEL [ CALIFORNIA EASTERN LABS ]
