NEZ5964-4D/4DL,-8D/8DL,-15D/15DL
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
NEZ5964-4D/4DL
NEZ5964-8D/8DL
NEZ5964-15D/15DL
VDS
VGS
VGD
IDS
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
V
V
15
-12
15
-12
15
-12
V
-18
-18
-18
A
IDSS
IDSS
IDSS
IGRF
TCH
TSTG
Gate Current
mA
°C
°C
W
25
50
100
Channel Temperature
Storage Temperature
Total Power Dissipation
175
175
175
-65 to +175
25
-65 to +175
50
-65 to +175
100
PT
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
MAXIMUM OPERATING LIMITS
PART NUMBER
Rg MAX1
IGRF MAX
mA
VDS MAX
V
Ω
NEZ5964-4D/4DL
NEZ5964-8D/8DL
NEZ5964-15D/15DL
200
100
50
5
10
10
10
10
20
Note:
1. Rg MAX is the maximum recommended series resistance
between the Gate Supply and the FET Gate.
TYPICAL PERFORMANCE CURVES(TA = 25°C)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER (-15D/DL)
INTERMODULATION DISTORTION
vs. OUTPUT POWER
6.0
44
41
-20
-4DL
-8DL
-15DL
-30
POUT
5.0
4.0
3.0
38
35
I
DS
-40
-50
32
29
2.0
1.0
IM
3
-60
-70
26
0.0
I
GS
-1.0
-2.0
23
20
IM
5
-80
22
26
30
42
34
38
29
14
17
20
23
32
35
38
26
Total Output Power, POUT (dBm)
Input Power, PIN (dBm)
OUTPUT POWER, DRAIN AND GATE
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER (-8D/DL)
CURRENTS vs. INPUT POWER (-4D/DL)
41
4.0
39
2.0
3.0
2.0
1.0
36
33
30
27
24
21
38
P
OUT
P
OUT
1.0
35
32
I
DS
I
DS
0.0
29
0.0
I
GS
I
GS
26
23
-1.0
-2.0
-1.0
16
19
25
28
31
22
34
14
23
29
32
17
20
26
Input Power, PIN (dBm)
Input Power, PIN (dBm)
CEL [ CALIFORNIA EASTERN LABS ]
