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NEZ-4450-8DL 参数 Datasheet PDF下载

NEZ-4450-8DL图片预览
型号: NEZ-4450-8DL
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN]
分类和应用: 局域网放大器晶体管
文件页数/大小: 5 页 / 50 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NEZ-4450-8DL的Datasheet PDF文件第1页浏览型号NEZ-4450-8DL的Datasheet PDF文件第3页浏览型号NEZ-4450-8DL的Datasheet PDF文件第4页浏览型号NEZ-4450-8DL的Datasheet PDF文件第5页  
NEZ4450-4D/4DL,-8D/8DL,-15D/15DL  
TYPICAL PERFORMANCE CURVES (TC = 25°C)  
OUTPUT POWER, DRAIN AND GATE  
CURRENTS vs. INPUT POWER (-15D/DL)  
INTERMODULATIONDISTORTION  
vs. OUTPUT POWER  
44  
41  
38  
35  
32  
29  
26  
6.0  
5.0  
4.0  
3.0  
2.0  
-20  
-15DD  
-8DD  
-4DD  
P
OUT  
-30  
-40  
I
DS  
-50  
IM3  
1.0  
0.0  
-60  
-70  
I
GS  
23  
20  
-1.0  
-2.0  
IM5  
-80  
14  
17  
20  
23  
26  
29  
32  
35  
38  
22  
28  
30  
34  
38  
42  
Input Power, PIN (dBm)  
Total Output Power, POUT (dBm)  
OUTPUT POWER, DRAIN AND GATE  
CURRENTS vs. INPUT POWER (-8D/DL)  
OUTPUT POWER, DRAIN AND GATE  
CURRENTS vs. INPUT POWER (-4D/DL)  
4.0  
39  
36  
33  
30  
27  
2.0  
1.0  
41  
38  
P
OUT  
P
OUT  
3.0  
2.0  
1.0  
0.0  
35  
32  
I
DS  
I
DS  
29  
0.0  
I
GS  
I
GS  
-1.0  
-2.0  
26  
23  
24  
21  
-1.0  
16  
19  
22  
25  
28  
31  
34  
14  
17  
20  
23  
26  
29  
32  
Input Power, PIN (dBm)  
Input Power, PIN (dBm)  
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)  
SYMBOLS  
PARAMETERS  
UNITS  
RATINGS  
NEZ4450-4D/4DL  
NEZ-4450-8D/8DL  
NE7-4450 -15D/15DL  
VDS  
VGSO  
VGDO  
IDS  
Drain to Source Voltage  
Gate to Source Voltage  
Gate to Drain Voltage  
Drain Current  
V
V
15  
-7  
15  
15  
-7  
-7  
-18  
V
-18  
-18  
A
IDSS  
IDSS  
IDSS  
IGRF  
Gate Current  
mA  
°C  
°C  
W
25  
50  
100  
Tch  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
175  
175  
175  
Tstg  
PT  
-65 to +175  
2.5  
-65 to +175  
50  
-65 to +175  
100  
Note:  
1. Operation in excess of any of these parameters may result in permanent damage.  
MAXIMUM OPERATING LIMITS  
PART NUMBER  
RG MAX1  
IGRF MAX  
mA  
VDS MAX  
V
NEZ-4450-4D/4DD  
NEZ-4450-8D/8DD  
NEZ-4450-15D/15DD  
200  
100  
50  
5
10  
10  
10  
10  
20  
Note:  
1. Rg MAX is the maximum recommended series resistance between the Gate Supply and the FET Gate.