NEZ-4450-8DL 参数 Datasheet PDF下载

C-BAND INTERNALLY

MATCHED POWER GaAs MESFET

FEATURES

•

HIGH P

OUT

18 W (42.5 dBm) TYP P

1dB

for NEZ4450-15D/15DL

9 W (39.5 dBm) TYP P

1dB

for NEZ4450-8D/8DL

4.5 W (36.5 dbm) TYP P

1dB

for NEZ4450-4D/4DL

HIGH EFFICIENCY

40%

ηadd

for 4.5W Device

38%

ηadd

for 9W Device

37%

ηadd

for 18W Device

LOW IMD

-45 dBc IM

3

@ 31.5 dBm Pout (S.C.L.) -15DL

-45 dBc IM

3

@ 29 dBm Pout (S.C.L.) -8DL

-45 dBc IM

3

@ 26 dBm Pout (S.C.L.) -4DL

SiO

2

PASSIVATED CHIP

For Power/Gain Stability Under RF Overdrive

CLASS A OPERATION

INTERNALLY MATCHED (IN/OUT)

INDUSTRY COMPATIBLE HERMETIC PACKAGES

= 25°C)

NEZ4450-4D

NEZ4450-4DL

T-61

UNITS

dBm

dBm

dBm

%

A

dB

MIN

35.5

NEZ4450-8D

NEZ4450-8DL

T-61

TYP MAX

45

-15D

-8D

-4D

40

NEZ4450-15D

NEZ4450-15DL

NEZ4450-8D

NEZ4450-8DL

NEZ4450-4D

NEZ4450-4DL

OUTPUT POWER AND EFFICIENCY

vs. INPUT POWER

100%

•

P

OUT

80%

35

60%

•

30

40%

25

Efficiency

20

12

17

22

27

32

37

20%

•

•

•

•

0%

Input Power, P

IN

(dBm)

ELECTRICAL CHARACTERISTICS

(T

C

PART NUMBER

PACKAGE OUTLINE

SYMBOLS

P

1DB

CHARACTERISTICS

Output Power at P

IdB1

I

D

= 0.8A, RF Off

I

D

= 1.6A,RF Off

I

D

= 4.0A, RF Off

Power Added Efficiency @ P

1dB

Drain Current at P

1dB

Linear Gain

3rd Order Intermodulation

3

Distortion at

Pout = 26 dBm SCL

2

Pout = 29 dBm SCL

2

Pout = 31.5 dBm SCL

2

Saturated Drain Current

V

GS

= 0 V

Pinch Off Voltage

I

DS

= 15mA

I

DS

= 30mA

I

DS

= 60mA

Drain-Gate Breakdown Voltage

I

DG

= 15 mA

I

DG

= 30 mA

I

DG

= 60 mA

Transconductance

I

DS

= IA

I

DS

= 2A

I

DS

= 4A

Thermal Resistance

Channel to Case

Channel Temperature

Rise

4

NEZ4450-15D

NEZ4450-15DL

T-65

MIN

TYP MAX

TEST CONDITIONS

V

DS

= 10V

f= 4.4

to 5.1 GHz

Zs = Z

L =

50 ohms

I

DSQ

= 0.5 x I

DSS

V

DS

= I0V

f

1

= 4.99GHz

f

2

= 5.00 GHZ

2 Equal Tones

TYP MAX MIN

36.5

38.5

40

1.1

39.5

38

2.2

41.5 42.5

37

4.4

9.0

10.0

η

ADD

I

DS

G

L

IM

3

-XDL

Option

Only

I

DSS

V

P

1.5

9.5

3.0

6.0

9.5

10.5

10.5

dBc

dBc

dBc

A

V

V

V

V

V

V

mS

mS

mS

°C/W

°C

1.0

-3.5

-45

-42

-45

-42

-45

-42

14.0

2.3

-2.0

3.5

-0.5

2.0

4.5

7.0

4.0

9.2

V

DS

= 2.5 V

-4.0

-2.0

-0.5

-3.5

-2.2

-0.5

BV

DGO

20

22

20

22

20

1300

2600

5200

5.0

6.0

48

2.5

3.0

48

1.3

1.5

60

22

g

m

R

TH (CH-C)

∆T

(CH-C)

Notes: 1. P

1dB

: Ouptut Power at the 1dB Gain Compression Point 2. S.C.L.: Single Carrier Level 3. Maximum Spec Applies to -XDL Option Only

4.

∆T

(CH-C)

= T

CH

-T

C

= 10 V x I

DSQ

X R

TH (CH-C) MAX.

California Eastern Laboratories

Power Added Efficiency,

η

ADD

(%)

Output Power, P

OUT

(dBm)