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NESG3031M14 参数 Datasheet PDF下载

NESG3031M14图片预览
型号: NESG3031M14
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 9 页 / 548 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG3031M14  
OUTPUT POWER, COLLECTOR  
OUTPUT POWER, COLLECTOR  
CURRENT vs. INPUT POWER  
CURRENT vs. INPUT POWER  
20  
15  
10  
5
50  
40  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
V
CE = 3 V, f = 2.4 GHz  
V
CE = 3 V, f = 5.8 GHz  
I
C (set) = 20 mA  
I
C (set) = 20 mA  
Pout  
Pout  
30  
20  
10  
0
IC  
IC  
0
0
-5  
-5  
-20  
-15  
-10  
-5  
0
5
-15  
-10  
-5  
0
5
10  
Input Power Pin (dBm)  
Input Power Pin (dBm)  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
5
4
20  
16  
12  
8
5
4
15  
12  
9
Ga  
Ga  
3
2
1
0
3
2
1
0
6
4
3
NF  
NF  
VCE = 2 V  
VCE = 2 V  
f = 5.8 GHz  
f = 2.4 GHz  
0
0
1
10  
100  
1
10  
100  
Collector Current IC (mA)  
Collector Current IC (mA)  
Remark The graphs indicate nominal characteristics.  
7