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NESG3031M14 参数 Datasheet PDF下载

NESG3031M14图片预览
型号: NESG3031M14
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 9 页 / 548 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG3031M14  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
VCE = 2 V  
IC = 20 mA  
VCE = 1 V  
IC = 20 mA  
MSG  
MSG  
MAG  
MAG  
MAG  
MSG  
|S21e|2  
|S21e|2  
0
0
1
10  
Frequency f (GHz)  
100  
1
10  
Frequency f (GHz)  
100  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
30  
25  
20  
15  
10  
5
30  
VCE = 1 V  
VCE = 3 V  
IC = 20 mA  
f = 2.4 GHz  
MSG  
25  
20  
15  
10  
5
MAG  
MSG  
MAG  
MAG  
|S21e|2  
MSG  
|S21e|2  
0
0
1
10  
Frequency f (GHz)  
100  
1
10  
Collector Current IC (mA)  
100  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
30  
30  
VCE = 2 V  
VCE = 3 V  
f = 2.4 GHz  
f = 2.4 GHz  
25  
20  
15  
10  
5
25  
20  
15  
10  
5
MSG  
MSG  
MAG  
MAG  
|S21e|2  
|S21e|2  
0
0
1
10  
Collector Current IC (mA)  
100  
1
10  
Collector Current IC (mA)  
100  
Remark The graphs indicate nominal characteristics.  
5