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NESG2101M16 参数 Datasheet PDF下载

NESG2101M16图片预览
型号: NESG2101M16
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用:
文件页数/大小: 3 页 / 228 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NESG2101M16的Datasheet PDF文件第1页浏览型号NESG2101M16的Datasheet PDF文件第3页  
NESG2101M16  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)  
OUTLINE DIMENSIONS (Units in mm)  
SYMBOLS  
VCBO  
VCEO  
VEBO  
IC  
PARAMETERS  
UNITS  
RATINGS  
13.0  
5.0  
PACKAGE OUTLINE M16  
6-PIN LEAD-LESS MINIMOLD  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
V
V
1.5  
mA  
mW  
100  
PT2  
Total Power Dissipation  
190  
TJ  
Junction Temperature  
Storage Temperature  
°C  
°C  
150  
TSTG  
-65 to +150  
Note:  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.  
1.0±0.05  
+0.07  
-0.05  
0.8  
ORDERING INFORMATION  
PART NUMBER  
QUANTITY  
SUPPLYING FORM  
NESG2101M16-T3-A 10 K pcs  
reel  
Pin 1 (Collector), Pin 6  
(Emitter) face the perfora-  
tion side of the tape  
PIN CONNECTIONS  
4. Base  
5. Emitter  
6. Emitter  
1. Collector  
2. Emitter  
3. Emitter  
Life Support Applications  
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably  
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and  
agree to fully indemnify CEL for all damages resulting from such improper use or sale.  
11/13/2003  
A Business Partner of NEC Compound Semiconductor Devices, Ltd.