PRELIMINARY DATA SHEET
NEC's NPN SiGe
NESG2101M16
HIGH FREQUENCY TRANSISTOR
FEATURES
•
•
•
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
HIGH OUTPUT POWER:
P
1dB
= 21 dBm at 2 GHz
LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 0.6 dB at 1 GHz
HIGH MAXIMUM STABLE POWER GAIN:
MSG = 17 dB at 2 GHz
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
M16
•
•
DESCRIPTION
NEC's NESG2101M16 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
1dB
G
L
NF
G
a
NF
G
a
MSG
|S
21E
|
2
f
T
C
re
I
CBO
DC
I
EBO
h
FE
Notes:
RF
PARAMETERS AND CONDITIONS
Output Power at 1 dB Compression Point
V
CE
= 3.6 V, I
CQ
= 10 mA, f = 2 GHz, Z
S
= Z
SOPT
, ZL = Z
LOPT
Linear Gain, V
CE
= 3.6 V, I
CQ
= 10 mA, f = 2 GHz,
Noise Figure at V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Noise Figure at V
CE
= 2 V, I
C
= 7mA, f = 1 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 7 mA, f = 1 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain at V
CE
= 2 V, I
C
= 15 mA
3
NESG2101M16
M16
UNITS
dBm
dB
dB
dB
dB
dB
dB
dB
GHz
pF
nA
nA
130
190
14.5
11.5
14
11.0
MIN
TYP
21
15
0.9
13.0
0.6
19.0
17.0
13.5
17
0.4
0.5
100
100
260
1.2
MAX
1. MSG = S
21
S
12
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width
≤
350
μs,
duty cycle
≤
2 %.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
