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NESG2046M33-A 参数 Datasheet PDF下载

NESG2046M33-A图片预览
型号: NESG2046M33-A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗晶体管低噪声,高 - 获得扩增 [NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION]
分类和应用: 晶体晶体管光电二极管ISM频段放大器
文件页数/大小: 4 页 / 289 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG2046M33  
ELECTRICAL CHARACTERISTICS (TA =+25ºC)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
DC Characteristics  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
ICBO  
IEBO  
VCB = 5 V, IE = 0 mA  
100  
100  
220  
nA  
nA  
VEB = 0.5 V, IC = 0 mA  
VCE = 1 V, IC = 2 mA  
Note 1  
hFE  
140  
180  
RF Characteristics  
Gain Bandwidth Product  
Insertion Power Gain  
fT  
VCE = 1 V, IC = 15 mA, f = 2 GHz  
VCE = 1 V, IC = 15 mA, f = 2 GHz  
15  
11  
18  
13  
GHz  
dB  
|S21e|2  
VCE = 1 V, IC = 3 mA, f = 2 GHz,  
ZS = ZSopt, ZL = ZLopt  
Noise Figure  
NF  
0.8  
1.5  
dB  
VCE = 1 V, IC = 3 mA, f = 2 GHz,  
ZS = ZSopt, ZL = ZLopt  
Associated Gain  
Ga  
9.5  
11.5  
0.2  
dB  
pF  
Note 2  
Reverse Transfer Capacitance  
Cre  
VCB = 1 V, IE = 0 mA, f = 1 MHz  
0.4  
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%  
2. Collector to base capacitance when the emitter grounded  
hFE CLASSIFICATION  
RANK  
Marking  
hFE Value  
FB  
T7  
140 to 220