PRELIMINARY DATA SHEET
NEC's NPN SiGe TRANSISTOR NESG2046M33
FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
FEATURES
•
•
IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., G
a
= 11.5 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
HIGH BREAKDOWN VOLTAGE TECHNOLOGY
FOR SIGE TRANSISTORS
:
V
CEO
(absolute maximum ratings) = 5.0 V
•
3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER
NESG2046M33-A
NESG2046M33-T3-A
QUANTITY
50 pcs (Non reel)
10 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
RATINGS
13
5
1.5
40
130
150
−65
to +150
UNIT
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
