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NE97833-T1B-A 参数 Datasheet PDF下载

NE97833-T1B-A图片预览
型号: NE97833-T1B-A
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅高频三极管 [PNP SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 6 页 / 170 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE97833-T1B-A的Datasheet PDF文件第1页浏览型号NE97833-T1B-A的Datasheet PDF文件第3页浏览型号NE97833-T1B-A的Datasheet PDF文件第4页浏览型号NE97833-T1B-A的Datasheet PDF文件第5页浏览型号NE97833-T1B-A的Datasheet PDF文件第6页  
NE97833  
DC CURRENT GAINS VS.  
COLLECTOR CURRENT  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)  
SYMBOLS  
VCBO  
VCEO  
VEBO  
IC  
PARAMETERS  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
UNITS  
RATINGS  
100  
V
-20  
-12  
V
V
-3  
V
V
V
CE = -3 V  
CE = -2 V  
CE = -1 V  
mA  
°C  
-50  
TJ  
Junction Temperature  
Storage Temperature  
150  
TSTG  
°C  
-65 to +200  
10  
Note:  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
1
-0.1  
-1.0  
-10  
-100  
-1000  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
Collector Current, IC (mA)  
DC POWER DERATING CURVES  
INSERTION GAIN vs. FREQUENCY  
400  
FREE AIR  
30  
20  
300  
200  
V
CE = -10 V  
IC = -15 mA  
10  
0
V
I
CE = 1 V  
C = 5 mA  
NE97833  
100  
-10  
0
0
50  
100  
150  
200  
100  
200 300  
500  
1000  
3000  
Ambient Temperature, TA (°C)  
Frequency, f (MHz)  
GAIN BANDWIDTH  
INSERTION GAIN  
vs. COLLECTOR CURRENT  
vs. COLLECTOR CURRENT  
14  
12  
10  
8
14  
f = 1 GHz  
f = 1 GHz  
12  
10  
V
CE = -10 V  
VCE = -10 V  
8
6
6
V
CE = -3 V  
V
CE = -3 V  
4
4
V
CE = -1 V  
V
CE = -1 V  
2
0
2
0
1
100  
10  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)