PNP SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 5.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE:
NE02133
• HIGH INSERTION POWER GAIN:
|S
21E
|
2
= 10 dB at 1 GHz
33 (SOT 23 STYLE)
NE97833
DESCRIPTION
NEC’s NE97833 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97833 offers
excellent performance and reliability at low cost.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE
I
CBO
I
EBO
C
RE
2
P
T
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at V
CE
= -10 V, I
C
= -15 mA
Noise Figure at V
CE
= -10 V, I
C
= -3 mA
Insertion Power Gain at V
CE
= -10 V, I
C
= -15 mA, f = 1 GHz
Forward Current Gain Ratio at V
CE
= -10 V, I
C
= -15 mA
Collector Cutoff Current at V
CB
= -10 V, I
E
= 0
Emitter Cutoff Current at V
BE
= -2 V, I
C
= 0
Feedback Capacitance at V
CB
= -10 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
µA
µA
pF
mW
0.5
UNITS
GHz
dB
dB
8.0
20
MIN
4.0
NE97833
2SA1978
33
TYP
5.5
2.0
10.0
40
100
-0.1
-0.1
1.0
200
3.0
MAX
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
